RELAXATION D'UN FAISCEAU IONIQUE INJECTE DANS LE PLASMA TRANSVERSALEMENT A UN CHAMP MAGNETIQUEBORISENKO AG; KIRICHENKO GS.1972; ZH. EKSPER. TEOR. FIZ., PIS'MA REDAKC.; S.S.S.R.; DA. 1972; VOL. 16; NO 6; PP. 349-352; BIBL. 12 REF.Serial Issue

NEUTRALISED ION BEAM MILLING: ANOMALOUS SPUTTER YIELD BEHAVIOURPITT CW; SPINGH SP.1980; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1980; VOL. 16; NO 19; PP. 721-722; BIBL. 12 REF.Article

A NEW PRODUCTION TECHNIQUE: ION MILLING. II: APPLICATIONSBOLLINGER D; FINK R.1980; SOLID STATE TECHNOL.; ISSN 0038-111X; USA; DA. 1980; VOL. 23; NO 12; PP. 97-103; BIBL. 10 REF.Article

THE DEVELOPMENT OF SURFACE MORPHOLOGY DURING SPUTTERING WITH SPATIALLY NON-UNIFORM ION BEAMSNOBES MJ; WEBB RP; CARTER G et al.1980; RAD. EFFECTS; GBR; DA. 1980; VOL. 50; NO 3-6; PP. 133-138; BIBL. 14 REF.Article

A NEW PRODUCTION TECHNIQUE: ION MILLINGBOLLINGER D; FINK R.1980; SOLID STATE TECHNOL.; ISSN 0038-111X; USA; DA. 1980; VOL. 23; NO 11; PP. 79-84; BIBL. 11 REF.Article

ETCHED PROFILE OF SI BY ION-BOMBARDMENT-ENHANCED ETCHINGMORIWAKI K; ARITOME H; NAMBA S et al.1981; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; NO 7; PP. 1305-1309; BIBL. 7 REF.Article

MULTI-APERTURE ION SOURCE WITH A DEFLECTABLE FOCUSED BEAM FOR COMPOSITIONAL CONTROL IN SPUTTER DEPOSITIONSMITS JW.1981; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1981; VOL. 19; NO 3; PP. 704-708; BIBL. 11 REF.Article

MASS SPECTROMETRY APPLIED TO A REACTIVE ION MILLDENNISON RW.1980; SOLID STATE TECHNOL.; ISSN 0038-111X; USA; DA. 1980; VOL. 23; NO 9; PP. 117-120; BIBL. 12 REF.Article

THE EFFECT OF CATHODE MATERIALS ON REACTIVE ION ETCHING OF SILICON AND SILICON DIOXIDE IN A CF4 PLASMA.EPHRATH LM.1978; J. ELECTRON. MATER.; U.S.A.; DA. 1978; VOL. 7; NO 3; PP. 415-428; BIBL. 11 REF.Article

BROAD BEAM ION SOURCE OPERATION WITH FOUR COMMON GASESPAK S; SITES JR.1980; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1980; VOL. 51; NO 4; PP. 536-539; BIBL. 16 REF.Article

NANOELECTRONICSPICQUENDAR JE.1972; IN: ELECTRON ION BEAM SCI. TECHNOL. VTH INT. CONF.; PRINCETON; ELECTROCHEM. SOC.; DA. 1972; PP. 31-48Conference Proceedings

EXTRACTION OF HIGH CURRENT ION BEAMS WITH LAMINATED FLOWKANAYA K; KOGA K; TOKI K et al.1972; J. PHYS. E; G.B.; DA. 1972; VOL. 5; NO 7; PP. 641-648; BIBL. 18 REF.Serial Issue

FORMATION DE PARTICULES NEUTRES DANS LES FAISCEAUX IONIQUES ACCELERES DANS UN CYCLOTRONSLYUSARENKO LI; TOKAREVSKIJ VV.1972; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1972; NO 4; PP. 24-25; BIBL. 2 REF.Serial Issue

MOLECULAR EROSION OF ICE BY KEV ION BOMBARDMENTCIAVOLA G; FOTI G; TORRISI L et al.1982; RADIATION EFFECTS; ISSN 0033-7579; GBR; DA. 1982; VOL. 65; NO 1-4; PP. 167-172; BIBL. 11 REF.Article

ION ETCHING OF THIN WINDOWS IN SILICON.SPENCER EG; LENZO PV; SCHMIDT PH et al.1974; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1974; VOL. 11; NO 5; PP. 863-864; BIBL. 9 REF.Article

ION BEAM ETCHING WITH REACTIVE GASESBOLLINGER LD.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 1; PP. 99-108; BIBL. 15 REF.Article

ION-INDUCED AMORPHOUS AND CRYSTALLINE PHASE FORMATION IN AL/NI, AL/PD, AND AL/PT THIN FILMSHUNG LS; NASTASI M; GYULAI J et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 8; PP. 672-674; BIBL. 9 REF.Article

DRY ETCHING AIDS IN REALIZATION OF VLS/SMITO H.1981; JEE, J. ELECTRON. ENG.; ISSN 0385-4507; JPN; DA. 1981; VOL. 18; NO 177; PP. 81-86Article

LES DIVERS ASPECTS DE L'USINAGE IONIQUE APPLIQUE AUX SYSTEMES METALLIQUES DES TRANSISTORS BIPOLAIRES HYPERFREQUENCES.PESTIE JP; DUMONTET H; ANDRIEU JP et al.1974; VIDE; FR.; DA. 1974; NO 171 SUPPL.; PP. 161-170; BIBL. 7 REF.; (APPL. PROCESSUS ELECTRON. IONIQUES. IVEME CONGR. INT. AVISEM 74; TOULOUSE; 1974)Conference Paper

OBSERVATION OF SLOWING-DOWN OF ION-BEAM VELOCITY AND HEATING OF IONSFUJITA T; OHNUMA T; ADACHI S et al.1972; PHYS. LETTERS, A; NETHERL.; DA. 1972; VOL. 42; NO 4; PP. 319-320; BIBL. 9 REF.Serial Issue

VERBESSERTES IONENAETZVERFAHREN FUER INTEGRIERTE SCHALTUNGEN = AMELIORATION DU PROCEDE DE FABRICATION DE CIRCUITS INTEGRES PAR BOMBARDEMENT IONIQUE1972; INTERNATION. ELEKTRON. RDSCH.; DTSCH.; DA. 1972; VOL. 26; NO 9; PP. 223-224; ABS. ANGL. FRSerial Issue

INFLUENCE DE LA REFRACTION DU FAISCEAU IONIQUE A LA LIMITE DU CHAMP ELECTRIQUE DANS UN SPECTROGRAPHE DE MASSES A SOURCE IONIQUE A LASERBORISKIN AI; BRYUKHANOV AS; BYKOVSKIJ YU A et al.1983; ZURNAL TEHNICESKOJ FIZIKI; ISSN 0044-4642; SUN; DA. 1983; VOL. 53; NO 2; PP. 351-354; BIBL. 10 REF.Article

ION PROJECTION MICROLITHOGRAPHYSTENGL G; KAITNA R; LOSCHNER H et al.1982; SOLID STATE TECHNOL.; ISSN 0038-111X; USA; DA. 1982; VOL. 25; NO 8; PP. 104-109; BIBL. 45 REF.Article

AN ION (GA) BEAM EXPOSUREKUWANO H.1982; BULLETIN OF THE JAPAN SOCIETY OF PRECISION ENGINEERING; ISSN 0582-4206; JPN; DA. 1982; VOL. 16; NO 4; PP. 273-274; BIBL. 3 REF.Article

ION BEAM MILLING AS A DIAGNOSTIC FOR OPTICAL COATINGSHERRMANN WC JR; MCNEIL JR.1981; APPL. OPT.; ISSN 0003-6935; USA; DA. 1981; VOL. 20; NO 11; PP. 1899-1901; BIBL. 3 REF.Article